Design of vertical Ge quantum well asymmetric Fabry-Perot modulator without DBR

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators.

We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer pro...

متن کامل

Thickness variation compensation in a Fabry–Perot modulator array using a self-tuned Fabry–Perot structure

A method is presented for compensating cavity thickness variations in conventional Fabry–Perot devices through the replacement of the input mirror with a holographic mirror, resulting in a self-tuned Fabry–Perot ~STFP! device. The technique is suitable for integrating large arrays of electro-optic Fabry–Perot modulators with silicon circuitry. Experimental results of a STFP modulator are presen...

متن کامل

High performance Ge/SiGe quantum well electro-absorption modulator

A 23 GHz Ge/SiGe multiple quantum well electroabsorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit. Keywords-component; Quantum-confined Stark effect, Ge/SiGe, multiple quantum well modulators

متن کامل

Design of a new asymmetric waveguide in InP-Based multi-quantum well laser

Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...

متن کامل

Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking

Theory and experiment for dc and small-signal electrical modulation of an injection-locked quantum-well (QW) Fabry-Perot laser are presented. Our experiment is realized by performing side-mode injection locking of a multiple-quantum-well (MQW) InGaAsP FabryPerot (FP) laser, which has the advantage of optical wavelength conversion. We first measure the dc characteristics and optical spectra of a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Optics Express

سال: 2010

ISSN: 1094-4087

DOI: 10.1364/oe.18.023576